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Int. J. Electroactive Mater. 3 (2015) 6-9

Contact Mode Atomic Force Microscopy Cantilever Tips for Silicon Nanowires Fabrication

Siti Noorhaniah Yusoh*, Khatijah Aisha Yaacob

School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Nibong Tebal, Penang, Malaysia
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Abstract : This paper focuses on fabrication of silicon nanowires pattern using different types of contact mode AFM cantilever tips (Au, Cr/Pt, Al). The patterns were fabricated at different applied voltages (5, 6, 7, 8, and 9 V) with constant writing speed (0.3 μm/s) under relative humidity (55-65%). The patterns undergo for wet chemical etching process by using tetramethylammonium hydroxide and hydrofluoric acid solution to remove unwanted silicon layer and oxide mask layer. From the result it was found that oxide pattern is thicker with increasing voltage. The Au AFM cantilever tip at 9 V with 0.3 μm/s writing speed gives the best formation of silicon oxide structure and has potential to be used to fabricate semiconductors devices.

Keywords : Atomic Force Microscopy,silicon-on-insulator,cantilever tips,wet chemical etchin